The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 1998
Filed:
Jan. 11, 1996
Applicant:
Inventors:
Ju-hyung Lee, Seoul, KR;
Chan-joo Youn, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Kyungki-Do, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 57 ; 257 66 ;
Abstract
Disclosed is a thin film transistor (TFT) having a buffering pad layer and a method for manufacturing the same. This TFT is comprised of an active polysilicon pattern formed on a substrate. An oxide film is formed on the active polysilicon pattern. An intrinsic amorphous silicon pattern is formed on the oxide film and a metal pattern on the intrinsic amorphous silicon pattern. The intrinsic amorphous silicon layer serves as a buffering pad. The ion-implantation processes and heat processes are required if other types of silicon were used as a buffering pad.