The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 1998
Filed:
Nov. 22, 1996
Hideo Wada, Tokyo, JP;
Mitsuhiro Nagashima, Tokyo, JP;
Naoki Oda, Tokyo, JP;
Tokuhito Sasaki, Tokyo, JP;
Toru Mori, Tokyo, JP;
Abstract
At a heat treatment temperature in a reducing atmosphere of Ar and H.sub.2, a precursory film of V.sub.2 O.sub.5 is reduced into a VO.sub.x film with the heat treatment temperature selected in a predetermined temperature range between 350 .degree. C. and 450.degree. C., both exclusive, to control a resistivity of the VO.sub.x film, where x is greater than 1.875 and less than 2.0. The VO.sub.x film is not susceptible to a metal-semiconductor phase transition inevitable in VO.sub.2 at about 70.degree. C. and is excellent for use in a bolometer-type infrared sensor. When reduced at 350.degree. C. and 450.degree. C. the resistivity and its temperature coefficient of the VO.sub.x film at room temperature are 0.5 and 0.002 .OMEGA. cm and -2.2% and 0.2% per degree Celsius.