The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 1998

Filed:

Jun. 30, 1997
Applicant:
Inventors:

Ronald Alan Rudder, Wake Forest, NC (US);

Robert Carlisle Hendry, Orange County, NC (US);

George Carlton Hudson, Johnston County, NC (US);

Assignee:

Research Triangle Institute, Research Traiangle Park, NC (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
1187 / ; 1187 / ; 1187 / ; 156345 ; 20429816 ; 20429837 ;
Abstract

A method and apparatus for generating plasmas adapted for chemical vapor deposition, etching and other operations, and in particular to the deposition of large-area diamond films, wherein a chamber defined by sidewalls surrounding a longitudinal axis is encircled by an axially-extending array of current-carrying conductors that are substantially transverse to the longitudinal axis of the chamber, and a gaseous material is provided in the chamber. A high-frequency current is produced in the conductors to magnetically induce ionization of the gaseous material in the chamber and form a plasma sheath that surrounds and extends along the longitudinal axis and conforms to the sidewalls of the chamber. A work surface extending in the direction of the longitudinal axis of the chamber is positioned adjacent a sidewall, exposed to the plasma sheath and treated by the plasma. Preferably, the ratio of the width to the height of the chamber is 10:1 or larger so that the chamber includes a large area planar surface adjacent the plasma sheath and adjacent to which a large area substrate or a plurality of substrates is arranged, whereby large area treatment, such as diamond deposition, can be performed.


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