The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 1998
Filed:
Jun. 13, 1996
Michael C Cheng, Singapore, SG;
Tritech Microelectronics International Pte Ltd., Singapore, SG;
Abstract
A cascoded differential amplifier with a circuit for the injection of current to enhance the gain is described. The differential amplifier includes a differential pair of n-MOS FET's connected to a current source an a positive and a negative input terminal. A pair of isolation n-MOS FET's are inserted between the differential pair and a pair of current source loads. These isolate the current source loads from the differential pair. A current injector is connected to the drains of the n-MOS FET's of the differential pair. The isolation n-MOS FET's and the injected currents enhance the gain of the differential amplifier. A level translation circuit adjusts the output levels of the differential pair to levels required by circuitry attached to the output terminals of the level translation circuitry. A voltage biasing generation circuit creates bias voltages necessary to establish the currents through the differential amplifier, the amounts of injection current, the level the load currents, and the output voltage levels of the level translation circuit.