The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 1998

Filed:

Jun. 24, 1996
Applicant:
Inventors:

Daejeong Kim, Seoul, KR;

Sungho Wang, Seoul, KR;

Assignee:

LG Semicon Co., Ltd., Cheongju, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F / ;
U.S. Cl.
CPC ...
323313 ; 323315 ;
Abstract

A reference voltage generating circuit of a semiconductor device includes a start-up circuit connected to a reference current generator, a substrate variation sensor and a temperature compensation current- to-voltage converter receiving outputs from the generator and sensor. The start-up circuit is connected to a reset terminal, for generating a driving signal determining an operating point of the reference voltage generating circuit. The reference current generator has a current mirror of a constant current source for receiving the driving signal from the start-up circuit and generating a reference current. The reference current generator includes a voltage divider for determining the reference current. The substrate voltage variation sensor compensates for a variation of the reference current caused by the variation of a substrate voltage. The current-to-voltage converter converts the reference current to a reference voltage; and the temperature compensator connected to the output terminal, compensates for the variation of the reference current due to the variation of temperature.


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