The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 1998
Filed:
May. 17, 1996
Hideaki Fujiwara, Gifu, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A semiconductor device includes a semiconductor substrate, source and drain regions defined in the semiconductor substrate with a channel region therebetween, a first insulating layer located over the semiconductor substrate including over the channel region, a floating gate locating over the first insulating layer, a second insulating layer located over the floating gate, a first control gate located over the second insulating layer, a third insulating layer located over the first control gate, a second control gate located over the third insulating layer. The first and second control gates allow the injection of hot carriers onto the floating gate from the first control gate when predetermined first and second voltages are applied to the first and second control gates, respectively.