The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 1998
Filed:
Apr. 01, 1997
Applicant:
Inventors:
Joon Sung Lee, Seoul, KR;
Won Young Jung, Seoul, KR;
Assignee:
LG Semicon Co., Ltd., Chungcheongbuk-do, KR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438301 ; 438307 ; 438303 ; 438308 ;
Abstract
This invention relates to a semiconductor device and method for fabricating the semiconductor device, for forming a source and drain structure having no side diffusion. The semiconductor device includes a silicon substrate, a gate formed on the silicon substrate with a gate insulation film in between, and a source and drain formed of conductive material layers buried in the substrate to a designated depth at opposite sides of the gate, thereby providing a source with no side diffusion, preventing reduction of channel length, and improving element integration.