The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 1998
Filed:
Sep. 06, 1996
Applicant:
Inventors:
Hitoshi Sannomiya, Osaka, JP;
Takashi Tomita, Nara, JP;
Shunpei Yamazaki, Setagaya-ku, JP;
Yasuyuki Arai, Atsugi, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
1362 / ; 438 97 ;
Abstract
In a method for fabricating a solar cell, an amorphous silicon film of a first conductivity type is formed on a substrate, and nickel silicide is formed thereon. The amorphous silicon film is crystallized through heat treatment to obtain a crystalline silicon film of the first conductivity type. Residual nickel silicide on the surface of the crystalline silicon film of the first conductivity type is removed. Another crystalline silicon film of a second conductivity type is further formed on the surface of the crystalline silicon film of the first conductivity type.