The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 1998

Filed:

Sep. 04, 1996
Applicant:
Inventors:

Kiichi Hamamoto, Tokyo, JP;

Tatsuya Sasaki, Tokyo, JP;

Takeshi Takeuchi, Tokyo, JP;

Masako Hayashi, Tokyo, JP;

Keiro Komatsu, Tokyo, JP;

Ikuo Mito, Tokyo, JP;

Kenko Taguchi, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B / ;
U.S. Cl.
CPC ...
385 14 ; 372 50 ;
Abstract

A semiconductor waveguide layer is provided in an optical semiconductor integrated circuit device comprising a passive region having at least a branch and an active region having at least a laser diode connected to the branch and at least a photo-diode connected to the branch. The active region is in contact with the passive region. The waveguide layer selectively extends over the passive region and the active region. The semiconductor waveguide layer in the active region has a wavelength composition larger than that in the passive region. The waveguide layer has a semiconductor crystal structure which is continuous not only over the active and passive regions but also at a boundary between the active and passive regions.


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