The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 1998
Filed:
Jul. 28, 1997
Applicant:
Inventor:
Hiroki Koga, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257758 ; 257347 ; 257503 ; 365149 ; 438253 ;
Abstract
An insulation layer is formed on a silicon substrate. An SOI layer is formed on the insulation layer. A groove is selectively formed in the insulation layer. A bit line is buried in a lower half of the groove. A connection conductor layer is selectively formed on the side wall surface of the groove on the buried bit line. The SOI layer and the buried bit line are connected electrically via the connection conductor layer. A cap insulation layer is formed to fill the groove on the buried bit line in a region where said connection conductor layer is not formed.