The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 1998
Filed:
Apr. 21, 1997
Norifumi Sato, Tokyo, JP;
NEC Corporation, , JP;
Abstract
A semiconductor device includes a MOSFET which has a source and drain region of a first conductivity type, and an ion implanted channel section, and a pair of threshold control sections having a second conductivity type, one being disposed in a substrate surface between the channel section and the source region and the other being disposed in the substrate surface between the channel section and the drain region, and each of the threshold control sections having an impurity concentration so high that a threshold voltage of the MOSFET can be controlled. The threshold voltage of the MOSFET is not determined by the impurity concentration in the ion implanted channel section but is determined by the impurity concentration in the threshold voltage control sections. This enables the adequate control of the threshold voltage of the MOSFET that is part of a MOS integrated circuit and the simplification of the manufacturing method of the MOS integrated circuit.