The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 1998
Filed:
Mar. 29, 1996
Min-Koo Han, Seoul, KR;
Yearn-Ik Choi, Seoul, KR;
Jae-Hyung Kim, Kwangjoo, KR;
Han-Soo Kim, Seoul, KR;
Samsung Electronics Co., Ltd., Kyungki-Do, KR;
Abstract
A hybrid schottky injection field effect transistor is provided. A first diffusion region of a second conductivity type and a second diffusion region of a first conductivity type are separately formed at a main surface of a silicon layer. A third diffusion region of a first conductivity type is formed within the first diffusion region. An insulating layer covers part of the second diffusion region and the third diffusion region. A gate electrode is formed on the insulating layer and is situated over the first and third diffusion regions and the silicon layer. A cathode electrode is commonly connected to the third diffusion region and the first diffusion region. An anode electrode comprises a trench filled with electrode material and is formed in the silicon layer along side of the second diffusion area and a gate insulating layer.