The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 1998
Filed:
May. 31, 1996
Applicant:
Inventors:
Harold Hughes, West River, MD (US);
Patrick McMarr, Alexandria, VA (US);
Assignee:
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438423 ; 438407 ; 438473 ;
Abstract
The radiation hardness of a silicon-on-insulator structure is improved by planting dopant ions, such as Si, into the buried oxide layer. The dopant ions are implanted in the buried oxide layer, near, but not at, the active Si layer/buried oxide layer interface. This implantation creates electron traps/recombination centers in the buried oxide layer.