The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 1998
Filed:
Aug. 01, 1996
Applicant:
Inventors:
Yuichi Inaba, Katano, JP;
Kiyoshi Fujihara, Katano, JP;
Masato Ishino, Shijonawate, JP;
Takeshi Shimazaki, Kadoma, JP;
Isao Kidoguchi, Kawanishi, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
372 45 ; 372 46 ; 257757 ; 257766 ; 257 99 ; 257768 ; 257769 ;
Abstract
A semiconductor light emitting element includes a p-type electrode which in turn includes a contact electrode layer including at least a Pt layer. Particularly, the semiconductor light emitting element further includes a layered structure including at least an n-type cladding layer, an active layer, and a p-type cladding layer; and a p-type contact layer formed above the layered structure, and the contact electrode layer is formed on the p-type contact layer.