The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 1998
Filed:
Jul. 26, 1996
Applicant:
Inventors:
Bryan D Sheffield, Allen, TX (US);
John David Drummond, Wylie, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365154 ; 365156 ; 36523005 ; 36518904 ;
Abstract
A gate array structure includes a plurality of transistors (21-47) interconnected to form a two-bit memory cell. First and second interconnected transistors of the plurality are respectively provided in adjacent base sites (51, 53) of the gate array structure.
Sheffield, Bryan. (1998). High density two port memory cell (U.S. Patent No. 5793669). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5793669
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile