The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 1998

Filed:

May. 13, 1997
Applicant:
Inventors:

Robert D Adams, Essex Junction, VT (US);

George M Braceras, Colchester, VT (US);

John Connor, Burlington, VT (US);

Donald A Evans, Willston, VT (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H / ;
U.S. Cl.
CPC ...
361 90 ; 361111 ;
Abstract

A topology for arranging a plurality of transistors between a signal source and an off-chip receiver, using a single power supply voltage. A pass through NFET has a gate controlled by a network comprised of two transistors arrayed between the power supply voltage and the drain of the NFET, which limits overshoots to the power supply voltage and reduces undershoots. Further reduction of undershoots is accomplished by an additional network of transistors, optimally including a PFET in series with the pass through NFET.


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