The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 1998
Filed:
Aug. 22, 1996
Applicant:
Inventor:
Katsuhiko Nishitani, Kanagawa, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438287 ; 438289 ; 117 89 ; 117 93 ; 117102 ;
Abstract
A method of manufacturing a semiconductor light emitting device employs an MOCVD process. The method sequentially forms, on a GaAs substrate, at least an InGaAlP clad layer, an active layer, an InGaAlP clad layer, a GaAlAs or InGaAlP current diffusion layer, and a GaAlAs or InGaAlP light scattering layer. The flow-rate ratio (V/III ratio) of a V-group source gas to a III-group source gas for forming the light scattering layer is smaller than that for forming the current diffusion layer. As a result, the surface of the light scattering layer is roughened to improve light emission efficiency.