The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 1998
Filed:
Apr. 18, 1997
Woong Lim Choi, Chungcheongbuk-do, KR;
LG Semicon Co., Ltd., Chungcheongbuk-Do, KR;
Abstract
A data sensing apparatus and method of a multi-bit memory cell includes a first step of generating 2.sup.m -1 different reference voltages, a second step of applying a first intermediate reference voltage between at least two of the reference voltages to a control gate of the memory cell and outputting a binary bit as a highest bit depending upon detection of a drain current from the memory cell, and a third step of applying a second intermediate reference voltage between at least two of the reference voltages among the reference voltages lower than the first intermediate reference voltage applied to the control gate when the drain current is detected in the second step, and applying a third intermediate reference voltage between at least two of the reference voltages among the reference voltages higher than the first intermediate reference voltage applied to the control gate at the memory cell when the drain current is not detected, so as to output a lowest bit by repeatedly outputting data depending on whether the drain current is detected.
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