The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 1998
Filed:
Nov. 02, 1995
Yukio Hanyu, Atsugi, JP;
Akira Tsuboyama, Atsugi, JP;
Osamu Taniguchi, Chigasaki, JP;
Tadashi Mihara, Isehara, JP;
Katsutoshi Nakamura, Atsugi, JP;
Sunao Mori, Atsugi, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A ferroelectric liquid crystal device is constituted by disposing a ferroelectric liquid crystal between a pair of substrates having thereon electrodes for voltage application and provided with uniaxial alignment axes, as by rubbing, so as to provide a high pretilt angle of at least 10 degrees. A problematic liquid crystal movement in such a high-pretilt angle ferroelectric liquid crystal device is suppressed by improving a smectic layer structure therein, inclusive of a symmetry of pretilt angles at the pair of substrate boundary surfaces. Such an improved smectic layer structure is accomplished by a realigning treatment after cooling to the chiral smectic phase or in the final stage of the cooling to the chiral smectic phase as by application of an AC electric field and/or by repetitive heating-cooling in the chiral smectic phase. The improved smectic layer structure is represented by, e.g., an X-ray diffraction peak having an increased peak area and/or a decreased half-value width.