The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 1998
Filed:
Apr. 04, 1997
Kenichi Sakusabe, Tokyo, JP;
Abstract
A low power consumption mixing circuit and process comprise first and second field effect transistors 'FETs.' The first and second FETs each have at least a control electrode and a drive electrode. The drive electrodes of the first and second FETs are coupled together by a capacitor. An AC signal is supplied to the control electrode of the first FET through a first matching circuit, and the first FET amplifies the AC signal. The capacitor removes the DC component from the amplified AC signal that appears at the drive electrode of the first FET. The amplified AC signal, which is free from the DC component, is provided to the drive electrode of the second FET. A second AC signal is supplied to the control electrode of the second FET by another matching circuit. The second FET mixes the first and second AC signals that are supplied to the drive electrode of the second FET. This mixed signal is then provided through an output matching circuit as a mixed output signal. A supply voltage is provided at the drive electrode of the first FET but no supply voltage is provided at the drive electrode of the second FET. Instead, a negative bias voltage is applied at the control electrode of the second FET which results in the DC current in the drive electrode of the second FET being in a saturation range which thereby provides improved mixing at the drive electrode and improved inter-terminal isolation.