The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 1998
Filed:
May. 31, 1996
Hajime Ono, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor device has a p-n-p transistor structure having a collector implemented by a p.sup.- -substrate, a base formed as an n-diffused region in the surface region of the substrate, and an emitter formed as a p.sup.+ -diffused region in the first n-diffused layer. The p.sup.- -substrate and the n-base are maintained at a ground level, while the p.sup.+ -collector is maintained at a positive potential for biasing the p-n junction formed between the emitter and the base. The bias potential allows the p-n-p transistor structure to operate in its saturation region to activate the base region to define an enlarged carrier-incresed zone. An analog input pad is located within the carrier-increased zone and protected from a noise propagated from a digital circuit section located outside the carrier-increased zone.