The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 1998
Filed:
Jun. 10, 1997
Takao Arai, Tokyo, JP;
Kazumi Yamaguchi, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
The invention has the object of realizing a semiconductor device in which the various problems brought about by parasitic diodes in configuring a circuit are prevented, the semiconductor device being provided with first and second insulated-gate field-effect transistors, and being configured such that the source regions of the first and second insulation gate field-effect transistors are electrically connected, the back gate region, which in part constitutes a channel, and the source region of the first insulated-gate field-effect transistor are electrically connected, and the back gate region of the second insulated-gate field-effect transistor is electrically connected to the drain region of the first insulated-gate field-effect transistor.