The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 1998
Filed:
Oct. 01, 1996
Applicant:
Inventors:
Tadashi Takeoka, Nara, JP;
Sadayoshi Matsui, Tenri, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257101 ; 372 44 ; 372 45 ; 372 50 ; 257102 ; 257 97 ;
Abstract
In an AlGaInP type semiconductor light-emitting device, an n-type AlGaInP cladding layer and a p-type AlGaInP cladding layer are deposited so as to interpose an active layer made of GaInP or AlGaInP therebetween. Light guiding layers are provided between the active layer and the n-type cladding layer, and/or, between the active layer and the p-type cladding layer, respectively. The p-type cladding layer is doped with Be serving as a p-type dopant. The active layer, the p-type cladding layer and the light guiding layers are doped with Si which may serve as an n-type dopant.