The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 1998
Filed:
May. 29, 1997
Weidong Liu, Palo Alto, CA (US);
R Fabian Pease, Menlo Park, CA (US);
Stanford University, Stanford, CA (US);
Abstract
An electron beam system provides low aberration, 10 nm resolution at 100 eV landing energy. The system comprises a lens unit �46! having a built-in semiconductor junction detector �58!. The detector surrounds the sample-side of a focusing electrode �48! just upstream from a retarding electrode �50! which is positioned less than a millimeter from the sample �34!. Because the detector is within a few millimeters of the sample, it provides efficient detection of secondary electrons from the sample. The retarding electrode decreases the energies of the primary beam �22! from 10 keV to less than 100 eV, reduces distortions due to sample surface topography, and serves to accelerate secondary electrons back toward the detector, further improving detection efficiency.