The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 1998
Filed:
Nov. 17, 1995
Applicant:
Inventor:
David Kuan-Yu Liu, Cupertino, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438264 ; 438923 ;
Abstract
A gate stack formation process directed toward reducing floating gate oxidation which influences tunnel oxide thickness and, therefore, discharge speed. On a substrate upon which is formed an oxide layer, a first polysilicon layer, a dielectric layer, and a second polysilicon layer, only the second polysilicon layer and dielectric layer are etched. Source and drain regions are implanted through the first polysilicon layer. Subsequently, the first polysilicon layer is etched to form the full gate stack.