The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 1998
Filed:
Jan. 23, 1997
Applicant:
Inventor:
Akihiro Usujima, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
G03C / ;
U.S. Cl.
CPC ...
430313 ; 430330 ; 15665911 ; 427534 ; 427541 ;
Abstract
A method of manufacturing a semiconductor device comprising the steps of heating a substrate at a temperature not less than 200.degree. C., for example 800.degree. C., for a sufficient period; cooling the substrate down to room temperature; coating a chemically amplified resist film on the surface of the substrate; exposing a patterning region of the resist film; developing the resist film to form a resist pattern; and etching the surface of the substrate by a certain thickness, employing the resist pattern as a mask. In forming fine resist pattern using chemically amplified resist, resolution can be improved.