The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 1998
Filed:
Jan. 29, 1996
Applicant:
Inventors:
Fumihiko Matsuno, Tokyo, JP;
Nobuya Seko, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J / ;
U.S. Cl.
CPC ...
445 50 ; 445 58 ;
Abstract
In a field-emission cold cathode forming an emitter by the vacuum deposition method, contamination at the side surface of the insulating layer due to deposition of an emitter material during formation of the emitter is prevented. Thereby, deterioration of insulating resistance and dielectric strength between gate and emitter can also be prevented. With an oblique vacuum deposition, a sacrificing layer 5 is formed onto the entire area of the side surface within the cavity 4, an emitter is then vacuum deposited, and thereafter emitter material particles are removed together with the protecting film.