The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 1998
Filed:
Jan. 22, 1996
Kazuya Okamoto, Kanagawa-ken, JP;
Atsushi Yamada, Kanagawa-ken, JP;
Yoshiaki Nakano, Tokyo, JP;
Kunio Tada, Saitama-Ken, JP;
Nikon Corporation, Tokyo, JP;
Abstract
An integrated semiconductor laser apparatus is constructed in such an arrangement that a core layer is located in the proximity of an active layer so as to be in an evanescent-field area of light propagating in the active layer and that a carrier concentration of a second cladding layer is higher than that of a first cladding layer. Thus, most evanescent waves of light propagating in the core layer propagate in the first cladding layer of the low carrier concentration. Since the rate of evanescent waves absorbed by carriers is very low, the integrated semiconductor laser apparatus can propagate the light with small losses.