Method and device for measuring pattern coordinates of a pattern formed

Abstract

Pattern coordinates which have been measured on a substrate such as reticle, a mask or the like are also accurately reflected when this reticle is mounted to an exposure device. Thus, measurement deviations are suppressed. In accordance with the present invention, the device for measuring pattern coordinates includes an XY stage for the reticle to be mounted upon and a detection system for measuring the pattern on the reticle. The detection system is arranged under the XY stage and is made up of an objective lens and an optical detection system. The device for measuring pattern coordinates further includes a device for detecting the position of the XY stage comprising X and Y axis interferometers. The reticle is mounted upon the XY stage with its pattern surface facing downwards. This direction is the same orientation as when it is mounted in an exposure device. A laser beam is focused upon the pattern surface from under the XY stage. The pattern upon the reticle is detected by light scattered from the edges of the pattern. This light is detected by the detection system. When the pattern is detected, the position of the XY stage is read out from the X axis and Y axis interferometers.