The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 28, 1998

Filed:

Dec. 29, 1996
Applicant:
Inventors:

Kiyoshi Nishikawa, Tokyo, JP;

Mitsunori Nakatani, Tokyo, JP;

Katsuya Kosaki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257717 ; 257712 ; 257720 ; 257703 ; 257706 ; 438465 ;
Abstract

A semiconductor device includes a semiconductor substrate having first and second main surfaces; a function element layer having heating element portions generating heat during operation, disposed on the first main surface that is thinned; and a plated heat sink of a heat conductive material, having a thickness equal to or greater than that of the semiconductor substrate, disposed on a circumferential region of the second main surface at the perimeter of the semiconductor substrate inward, on main heat generating regions of the second main surface including regions opposite the heating element portions, and on supporting regions of the second main surface connecting the circumferential region to the main heat generating regions. The semiconductor device maintains the heat generating function and the handling performance of the plated heat sink, reduces internal stress during plating and repeated stress produced by heat cycles during fabricating processes, and lessens chip breakage and plating peeling.


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