The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 1998
Filed:
Sep. 18, 1996
Mamiko Nakanishi, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A field effect transistor includes an active layer having a surface; a source electrode and a drain electrode disposed on the surface of the active layer; a first gate electrode disposed on the surface of the active layer between the source electrode and the drain electrode, having a T-shaped cross section, and a lower layer and an upper layer, the lower layer contacting the active layer, and the upper layer being disposed on the lower layer and having a lower resistivity than the lower layer, and being longer than the lower layer in the direction parallel to the gate length; and a second gate electrode disposed on the surface of the active layer between the first gate electrode and the drain electrode, having a rectangular cross section and a single layer. The gate resistance of the first gate electrode is reduced, whereby efficiency is improved and noise is reduced. Further, since the second gate electrode has a single-layer structure, the size of the FET is reduced, so the distance between the first gate electrode and the drain electrode is reduced, resulting in a reduction in the parasitic drain resistance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile