The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 1998
Filed:
Sep. 13, 1995
Applicant:
Inventors:
Satoshi Yamashita, Tokyo, JP;
Hiroshi Kawarada, Kanagawa-ken, JP;
Masahiro Itoh, Tokyo, JP;
Naofumi Nakamura, Kanagawa-ken, JP;
Assignee:
Tokyo Gas Co., Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 77 ; 257280 ; 257499 ; 257613 ;
Abstract
A diamond semiconductor device having at least one MESFET integrated on a single diamond substrate and insulated from other semiconductor elements is made by preparing a homoepitaxial diamond film 1 having a hydrogen-terminated surface; then making a drain ohmic contact 3, a source ohmic contact 4, both of gold, and a gate electrode 5 of aluminum on the film 1; and changing a site of the hydrogen-terminated surface other than the site for the MESFET to be terminated with atoms other than hydrogen atoms.