The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 1998
Filed:
Jul. 09, 1996
Applicant:
Inventors:
Christopher Harris, Sollentuna, SE;
Mietek Bakowski, Skultuna, SE;
Lennart Zdansky, Vaster.ang.s, SE;
Bo Bijlenga, Skultuna, SE;
Assignee:
ABB Research Ltd., Zurich, SE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438268 ; 438546 ; 438931 ;
Abstract
In a method for producing a channel region layer in a SiC-layer for providing a voltage-controlled semiconductor device a layer of silicon being one of a) polycrystalline and b) amorphous is applied on top of the SiC-layer, an aperture is etched in the silicon layer extending to the SiC-layer, a surface layer of a certain thickness of the silicon layer is oxidized, and the lateral extension of the channel region layer is determined by removing the oxidized layer and carrying out a further implantation into the area exposed by the so formed enlarged aperture.