The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 1998

Filed:

Jan. 06, 1997
Applicant:
Inventors:

Kenshiro Arase, Kanagawa, JP;

Masaru Miyashita, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
36518518 ; 36518528 ; 36518529 ;
Abstract

A semiconductor nonvolatile memory device comprised of bit lines and source lines arranged in a hierarchy of main lines and sub-lines, the main lines and the sub-lines being selectively connected in accordance with the operation of the memory device and memory cells being connected in parallel between the sub-source lines and the sub-bit lines, wherein data is written by introducing electrons from the full channel surface to the charge-storage layer by FN tunneling and is erased by drawing out the electrons in the charge-storing layer from the drain side by FN tunneling. Operation is made possible by a single power source and the area of the cell of the full one transistor memory type is made smaller.


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