The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 1998

Filed:

Jul. 12, 1996
Applicant:
Inventors:

Mauro Sali, S. Angelo Lodigiano, IT;

Marco Dallabora, Carpiano, IT;

Marcello Carrera, Trescore Balneario, IT;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
3651852 ; 36518524 ;
Abstract

A method for setting the threshold voltage of a reference memory cell of a memory device is described, the reference memory cell being used as a reference current generator for generating a reference current which is compared by a sensing circuit of the memory device with currents sunk by memory cells to be sensed, belonging to a memory matrix of the memory device. The method comprises a first step in which the reference memory cell is submitted to a change in its threshold voltage, and a second step in which the threshold voltage of the reference memory cell is verified. The second step provides for performing a sensing of the reference memory cell using a memory cell with known threshold voltage belonging to the memory matrix as a reference current generator for generating a current which is compared by the sensing circuit with the current sunk by the reference memory cell.


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