The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 1998
Filed:
Apr. 23, 1997
Harumi Kawano, Miyazaki, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
An object of the present invention is to make it easy to realize a method of measuring a current which flows upon deactivation of a semiconductor integrated circuit in order to test whether a damaged transistor exists in the semiconductor integrated circuit. In order to achieve the above object, the present invention provides a semiconductor integrated circuit comprising an input node supplied with an input voltage, a reference node supplied with a reference voltage, a first source potential node supplied with a first source potential level, a second source potential node supplied with a second source potential level, a sense circuit connected between the first source potential node and the second source potential node and brought into an operating state during a period in which the first source potential level is supplied, the sense circuit comparing the input voltage and the reference voltage and outputting the result of comparison to a first node, a buffer circuit connected between the first node and an output node and adapted to output a voltage corresponding to the voltage appearing at the first node to the output node, and a first switching circuit connected between the first source potential node and the sense circuit and adapted to selectively connect between the sense circuit and the first source potential node in response to the voltage supplied to the reference node.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile