The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 1998
Filed:
Dec. 22, 1995
Keisuke Kawakita, Tokyo, JP;
Takahiro Yashita, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Mitsubishi Electric Engineering Co., Ltd., Tokyo, JP;
Abstract
A lateral transistor includes a first conductivity type semiconductor substrate, a first second conductivity type region in the substrate, a second second conductivity type region in the substrate spaced from and partially surrounding the first region including a plurality of sides and corners; an electrically insulating film covering the semiconductor substrate and including respective penetrating holes extending to the first and second regions; a first metal film disposed on the insulating film and contacting the second region through a first of the penetrating holes; and a second metal film disposed on the insulating film and contacting the first region through a second of the penetrating holes wherein the first metal film is missing opposite a first of the corners of the second region and the second metal film extends across the second region at the first corner.