The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 1998
Filed:
Aug. 30, 1996
LG Electronics Inc., Seoul, KR;
Abstract
A thin film transistor includes an insulating substrate; a polysilicon pattern formed on the insulating substrate; a first nitride layer disposed on a channel portion of the polysilicon pattern; heavily doped semiconductor layer regions disposed in upper portions of the polysilicon pattern on sides of the first nitride layer pattern; an interlevel insulating layer disposed on the insulating substrate, the polysilicon pattern, the first nitride layer and the heavily doped semiconductor layer regions, the interlevel insulating layer having a contact hole to expose a portion of the heavily doped semiconductor layer; source and drain electrodes connected to the heavily doped semiconductor layer regions through the contact hole; and a gate electrode formed on the interlevel insulating layer disposed on the first nitride layer.