The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 1998
Filed:
Feb. 21, 1997
Toshiyuki Kishi, Tokorozawa, JP;
Takashi Toida, Tokyo, JP;
Citizen Watch Co., Ltd., Tokyo, JP;
Abstract
On a semiconductor substrate (1) is provided an insulator film, on which is formed a lower gate electrode including a first lower gate electrode (5a) and a second lower gate electrode (5b), on which lower gate electrode is formed a lower gate insulator film. On the lower gate insulator film is disposed a device region (9), on which is disposed an upper gate electrode (13) by way of an upper gate insulator film. The device region (9) has island-shaped patterns. The first lower gate electrode (5a) is placed in substantially the middle part of the device region (9), while the second lower gate electrode (5b) is provided in parallel with the first lower gate electrode (5a) and at a boundary between the device region (9) and the insulator film. The upper gate electrode (13) is positioned orthogonal to the lower gate electrodes (5a, 5b). This configuration will make it possible to inhibit the occurrence of current leakage due to parasitic transistors.