The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 1998
Filed:
Oct. 30, 1996
Shinya Kyozuka, Ebina, JP;
Takeshi Nakamura, Ebina, JP;
Takayuki Yamada, Ebina, JP;
Yasuaki Miyamoto, Ebina, JP;
Fuji Xerox Co., Ltd., Tokyo, JP;
Abstract
Described is a semiconductor photo detector comprising, between two electrodes, at least one of said electrodes being a transparent electrode, an optical absorption layer which is composed of a non-single crystalline material, absorbs light and generates photo carriers and a carrier multiplication layer which is composed of a non-single crystalline material and multiplies the photo carriers generated by the optical absorption layer. The carrier multiplication layer is formed of a multilayer film obtained by stacking films each having plural layers which are composed of non-single crystalline Zn.sub.x Cd.sub.1-x M (0.ltoreq.x.ltoreq.1, M represents one selected from the group consisting of S, Se and Te) and are different in a composition ratio in accordance with a change in the value of x in said Zn.sub.x Cd.sub.1-x M, whereby a band discontinuity .DELTA.Ec of the conduction band can be made larger, an ionization rate of electrons can be heightened and the place where ionization occurs can be specified. As a result, sensitivity increase, noise reduction and low voltage drive can be attained.