The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 1998
Filed:
Jun. 26, 1997
Norbert Arnold, New Hempstead, NY (US);
Siemens Aktiengesellschaft, Munich, DE;
Abstract
A process for forming a silicon oxide-filled shallow trench on the active surface of a silicon chip starts with forming a trench in the silicon chip that has an upper portion with vertical side walls and a lower portion with tapered side walls. Then oxygen is implanted selectively into the walls of the lower portion of the trench and the chip is heated to react the implanted oxygen with the silicon to form silicon oxide. The rest of the trench is then filled with deposited silicon oxide, typically by depositing a layer of silicon oxide over the surface and then planarizing the deposited silicon oxide essentially to the level of the top of the trench. The silicon-filled shallow trench serves to divide the surface portion of the chip into discrete regions, each for housing one or more circuit components of an integrated circuit.