The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 1998
Filed:
Nov. 20, 1997
Shrinath Ramaswami, Gilbert, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method of forming a spacer (41) around a gate electrode (32) includes sequentially disposing a first layer (48), a second layer (36), and a third layer (37) of dielectric over a semiconductor substrate (31) and over the gate electrode (32) and, thereafter, sequentially etching the third (37), second (36), and first (48) layers. The third layer (37) is etched with a first etchant to define a width (51) for the spacer (41). The first etchant selectively etches the third layer (37) versus the second layer (36). Etching the third layer (37) does not expose the first layer (48) located beneath the second layer (36). A second etchant, which is different from the first etchant, is used to selectively etch the second layer (36) versus the first layer (48). Etching the second layer (36) does not expose the semiconductor substrate (31) located beneath the first layer (48).