The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 1998

Filed:

Feb. 09, 1994
Applicant:
Inventors:

Tamotsu Suzuki, Kawasaki, JP;

Kouichi Kawahara, Satsuma-gun, JP;

Assignees:

Fujitsu Limited, Kawasaki, JP;

Kyushu Fujitsu Electronics Limited, Satsuma-gun, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437194 ; 437229 ; 15665911 ;
Abstract

A metal wiring is fabricated for a semiconductor device by fabricating an metal layer made of, a aluminum alloy on a semiconductor substrate through an insulation layer and an undercoating layer for the metal layer, optically patterning a resist layer for producing a resist pattern, radiating ultraviolet rays onto the resist pattern for curing the resist pattern so that the resist pattern becomes a cured resist pattern, etching the metal layer with reactive gas including chlorine by using the cured resist pattern as a mask so as to produce a metal wiring under the cured resist pattern and ashing the cured resist pattern by down flow ashing of oxygen gas including hydrogen and/or hydrogen monoxide, producing the metal wiring to the semiconductor device, wherein the curing by radiation with ultraviolet rays reduces the amount of decomposed polymer on the pattern resist, and therefore on the metal wiring, which would otherwise have formed as a result of this down flow ashing with oxygen.


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