The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 1998
Filed:
Dec. 09, 1996
Alison Chaiken, Fremont, CA (US);
Richard P Michel, Bloomington, MN (US);
Regents of the University of California, Oakland, CA (US);
Abstract
An oxide (NiO, CoO, NiCoO) antiferromagnetic exchange bias layer produced by ion beam sputtering of an oxide target in pure argon (Ar) sputtering gas, with no oxygen gas introduced into the system. Antiferromagnetic oxide layers are used, for example, in magnetoresistive readback heads to shift the hysteresis loops of ferromagnetic films away from the zero field axis. For example, NiO exchange bia layers have been fabricated using ion beam sputtering of an NiO target using Ar ions, with the substrate temperature at 200.degree. C., the ion beam voltage at 1000V and the beam current at 20 mA, with a deposition rate of about 0.2 .ANG./sec. The resulting NiO film was amorphous.