The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 1998
Filed:
Jun. 21, 1996
Seung-Man Yang, Taejon, KR;
Seung-Bin Park, Taejon, KR;
Seung-Jin Lee, Seoul, KR;
Sang-Yon Lee, Seoul, KR;
Korea Advanced Institute of Science and Technology, Taejon, KR;
Abstract
The present invention relates to a process for preparing a composite inorganic membrane for hydrogen separation, more specifically, to a process for preparing a composite inorganic membrane for hydrogen separation which comprises formation of intermediate layer in an asymmetric porous alumina support by sol-gel method, and modification of pores of the alumina membrane by soaking palladium acetate solution into the pores and vapor-deposition to enhance the permeability and selectivity for hydrogen. A process for preparing an inorganic membrane for hydrogen separation comprises the steps of: (i) dip-coating an alumina support in alumina sol containing a palladium precursor which is uniformly dispersed while vacuumizing the inside of the support, to form an intermediate layer of thin palladium impregnated alumina membrane; (ii) soaking the membrane obtained in step(i) in the palladium precursor solution, drying it under vacuum for 2 to 4 hours, and vaporizing the soaked materials with the gradual increase of temperature up to 170.degree. to 190.degree. C. for the vaporized palladium precursor to be deposited onto the pores; and, (iii) heating the alumina membrane whose pores are deposited with palladium at 290.degree. to 310.degree. C. while vacuumizing the inside of the support.