The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 1998
Filed:
Apr. 02, 1993
Applicant:
Inventor:
Mitsuhiro Mori, Hitachi, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257487 ; 257110 ; 257121 ; 257146 ; 257147 ; 257139 ; 257141 ;
Abstract
In a composite controlled semiconductor device having an insulated gate, a p type semiconductor region forming no channel is provided between a plurality of p type semiconductor regions forming a channel and the potential of the p type semiconductor region in an ON state takes a value high enough to inject holes into an n type semiconductor region adjacent to the p type semiconductor region.
Mori, Mitsuhiro. (1998). Composite controlled semiconductor device and power conversion device (U.S. Patent No. 5780917). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5780917
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile