The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 1998
Filed:
Nov. 26, 1996
Joon Young Park, Chungcheongbuk-do, KR;
Gyoung Seon Gil, Jenrabuk-do, KR;
Seok Won Cho, Chungcheongbuk-do, KR;
LG Semicon Co., Ltd., Cheongju, KR;
Abstract
A thin film transistor that can have a greater on/off current ratio is disclosed. The thin film transistor includes a substrate, a first gate electrode section formed on a predetermined region of the substrate, a second gate electrode section formed on a predetermined portion of the first gate electrode section, a third gate electrode section formed on the second gate electrode section parallel to, and spaced from the first gate electrode section. A gate electrode is formed by the first, second and third gate electrode sections. A gate insulating film is formed on exposed surfaces of the first, second and third gate electrode sections and a semiconductor layer is formed on the gate insulating film and the substrate. A first impurity region is formed in the semiconductor layer on one side of the first gate electrode section and a second impurity region is formed in the semiconductor layer on the second and third gate electrode sections on the other side of the first gate electrode section.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile