The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 1998
Filed:
Dec. 06, 1996
Toshio Komuro, Tokyo, JP;
NEC Corporation, , JP;
Abstract
A semiconductor device with an LDD structure type MOS transistor is fabricated by forming a gate electrode on a semiconductor layer of a first conductivity type and a source/drain region in the semiconductor layer, the source/drain region having a high impurity concentration region and a low impurity concentration region of a second conductivity type. A pocket of the first conductivity type is formed in contact with the low impurity concentration region only on a drain region side and immediately under the low concentration region of the second conductivity type. The pocket formed only on the drain side can suppress the short channel effect and also the hot carrier generation without lowering the current capacity on the source side where no pocket is present.