The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 1998
Filed:
Mar. 28, 1996
Applicant:
Inventor:
Farrokh Omid-Zohoor, Sunnyvale, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438433 ; 438445 ; 438524 ;
Abstract
Formation of parasitic edge transistors at upper edges of trenches formed on a substrate of an integrated circuit is suppressed by implanting dopants into trench regions of the IC substrate before the trenches are formed in the trench regions by reactive ion etching. The widths of the trenches formed in the trench regions are narrower than the widths of the doped regions of the trench regions. The doped regions of the trench regions are formed by first implanting dopants into the trench regions and then heat treating the implanted regions to activate the dopants and to diffuse the dopants laterally from the implanted regions.