The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 1998
Filed:
Oct. 12, 1995
Junichi Kinoshita, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A linear active layer, a current block layer and a clad layer are formed on the first major surface of a wafer, while a first electrode is formed on the second major surface of the wafer. A linear first opening is formed in the first electrode. The wafer exposed to the first opening is etched to form a first guide groove linearly extending in a direction perpendicular to the active layer. A second electrode is formed on the clad layer and etched to form a linear second opening therein. The clad layer, current block layer and wafer, located directly under the second opening, are etched to form a second guide groove thereon so as to extend in a direction parallel to the active layer. The wafer is cleaved along the first guide groove to form bars each having semiconductor lasers. The bars are arranged in parallel to one another and separated from one another by the second guide groove. The wafer is cleaved or cut along the second guide groove to obtain semiconductor chips.